PetrSU at the IInd International Forum devoted to new achievements in the field of nanotechnologies

Petrozavodsk State University represented the Republic of Karelia at the IInd International Forum on nanotechnologies held in Moscow.

The Forum was held in Moscow in the central exhibition complex Expocenter on October 6-8. The Forum was organized by the Russian Corporation of Nanotechnologies (RUSNANO).

Program of the Forum included plenary session, a complex of panel discussions and papers, business part of the program and breakup groups on science and technologies, as well as presentations of companies, devices and equipment.

Within the scope of the Forum there has been held the Expocenter and the Second International Competition of Young Reserchers in the field of nanotechnologies.

One of the central events of the Forum was the first delivery of the annual International premium in the field of nanotechnologies RUSNANOPRIZE-2009, as well as delivery of the Russian youth premium in the field of nanoindustry founded by RUSNANO.

More than 100 organizations including famous Russian companies, scientific and educational institutions have taken part in the business program of the Forum. At the exhibition nanotechnologies in the Expocenter there have been presented lots of new equipment and appliances for research of nano-objects, as well as samples of products made of nanomaterials. Representatives from 35 countries of the world visited the exhibition.

Petrozavodsk State University at the exhibition was represented by Professor Genrikh Stefanovich, Doctor of Physics and Mathematics, Head of the Chair of geology and geophysics, and Deputy Dean for Research of the Faculty of Physical Engineering Andrey Velichko. Andrey Velichko has presented participants of the Forum his paper of the subject of Oxide electronics, components and devices in which he has told of the PetrSU's achievements in the field of research of the physical phenomena in structures on the basis of oxide films (metal-insulator junction and electronic switchings), perspective components for development and devices of new oxide electronics.

It appears, that silicon technology (flash technology) cannot provide necessary density of memory elements, therefore transition to 3D integration (where the microcircuit grows upwards) and low-temperature technologies is the alternative solution of the given task. Nanostructures on the basis of oxide metals and semiconductors can be received at low temperatures, possess a wide range of properties (insulators, conductors, semiconductors) and rich physical phenomena, therefore, it is possible to say with confidence that there comes the era of oxide electronics.

On the part of some the Russian scientific organizations, industrial enterprises and corporations Karelian scientists were made a number of offers on cooperation in solution of scientific and technical tasks.